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 Surface Mount PIN Diodes Technical Data
HSMP-38XX and HSMP-48XX Series
Features
* Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation * Surface Mount SOT-23 and SOT-143 Packages Single and Dual Versions Tape and Reel Options Available * Low Failure in Time (FIT) Rate[1]
Note: 1. For more information see the Surface Mount PIN Reliability Data Sheet.
required. The HSMP-48XX series are special products featuring ultra low parasitic inductance in the SOT-23 package, specifically designed for use at frequencies which are much higher than the upper limit for conventional SOT-23 PIN diodes. The HSMP-4810 diode is a low distortion attenuating PIN designed for operation to 3 GHz. The HSMP-4820 diode is ideal for limiting and low inductance switching applications up to 1.5 GHz. The HSMP-4890 is optimized for low current switching applications up to 3 GHz. The HSMP-386X series of general purpose PIN diodes are designed for two classes of applications. The first is attenuators where current consumption is the most important design consideration. The second application for this series of diodes is in switches where low cost is the driving issue for the designer. The HSMP-386X series Total Capacitance (CT) and Total Resistance (RT) are typical specifications. For applications that require guaranteed performance, the general purpose HSMP-383X series is recommended. For low distortion
Package Lead Code Identification
SINGLE
#0 SERIES COMMON ANODE
#2 COMMON CATHODE
#3 UNCONNECTED PAIR
#4 DUAL ANODE
#5 DUAL CATHODE
Description/Applications
The HSMP-380X and HSMP-381X series are specifically designed for low distortion attenuator applications. The HSMP-382X series is optimized for switching applications where ultra-low resistance is required. The HSMP-3880 switching diode is an ultra low distortion device optimized for higher power applications from 50 MHz to 1.5 GHz. The HSMP-389X series is optimized for switching applications where low resistance at low current and low capacitance are
#A
#B
attenuators, the HSMP-380X or -381X series are recommended. For high performance switching applications, the HSMP-389X series is recommended. A SPICE model is not available for PIN diodes as SPICE does not provide for a key PIN diode characteristic, carrier lifetime.
2
Absolute Maximum Ratings[1] TA = 25C
Symbol If Pt Piv Tj TSTG Parameter Forward Current (1 ms Pulse) Total Device Dissipation Peak Inverse Voltage Junction Temperature Storage Temperature Units Absolute Maximum Amp mW [2] -- C C 1 250 Same as VBR 150 -65 to 150
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. CW Power Dissipation at TLEAD = 25C. Derate to zero at maximum rated temperature.
PIN Attenuator Diodes Electrical Specifications TA = 25C (Each Diode)
Nearest Equivalent Minimum Maximum Maximum Minimum Maximum Axial Lead Breakdown Series Total High Low Part No. Voltage Resistance Capacitance Resistance Resistance 5082VBR (V) RS () CT (pF) RH () RL () 3080 100 2.0 0.37 1000 8
Part Number HSMP3800 3802 3804 3810 3812 3813 3814
Package Marking Code[1] D0 D2 D4 E0 E2 E3 E4
Lead Code Configuration 0 2 4 0 2 3 4 Single Series Common Cathode Single Series Common Anode Common Cathode
3081
100
3.0
0.35
1500
10
Test Conditions
VR = VBR Measure IR 10 A
IF = 100 mA f = 100 MHz
VR = 50 V f = 1 MHz
IF = 0.01 mA IF = 20 mA f = 100 MHz f= 100 MHz
PIN Switching Diodes Electrical Specifications TA = 25C
Nearest Equivalent Axial Lead Part No. 50823188 Minimum Breakdown Voltage VBR (V) 50 Maximum Series Resistance RS () 0.6* Maximum Total Capacitance CT (pF) 0.8* Maximum Shunt Mode Harmonic Distortion Hmd (dBc) --
Part Number HSMP3820 3822 3823 3824 3880 3890 3892 3893 3894 3895
Package Marking Code[1] F0 F2 F3 F4 S0 G0 G2 G3 G4 G5
Lead Code Configuration 0 2 3 4 0 0 2 3 4 5 Single Series Common Anode Common Cathode Single Single Series Common Anode Common Cathode Unconnected Pair
-- --
100 100
6.5 2.5
0.40 0.30**
-55 --
Test Conditions
VR = VBR Measure IR 10 A
IF = 5 mA f = 100 MHz IF = 10 mA*
VR = 50 V f = 1 MHz VR = 20 V* VR = 5 V**
2 fo, Zo = 50 W f o = 400 MHz Pin = +30 dBm 0 V bias
Note: 1. Package marking code is white.
3
PIN General Purpose Diodes, Electrical Specifications TA = 25C
Nearest Equivalent Axial Lead Part No. 50823077 Minimum Breakdown Voltage VBR (V) 200 Maximum Series Resistance RS () 1.5 Maximum Total Capacitance CT (pF) 0.3
Part Number HSMP3830 3832 3833 3834
Package Marking Code[1] K0 K2 K3 K4
Lead Code 0 2 3 4
Configuration Single Series Common Anode Common Cathode
Test Conditions
VR = VBR Measure IR 10 mA
IF = 100 mA f = 100 MHz
VR = 50 V f = 1 MHz
High Frequency (Low Inductance, 500 MHz - 3 GHz) PIN Diodes, Electrical Specifications TA = 25C
Part Number HSMP4810 4820 4890 Package Marking Code EB FA GA Minimum Breakdown Voltage VBR (V) 100 50 100 VR = VBR Measure IR 10 A Maximum Series Resistance RS () 3.0 0.6* 2.5** IF = 100 mA IF = 10 mA* IF = 5 mA** Typical Total Capacitance CT (pF) 0.35 0.75* 0.33 VR = 50 V f = 1 MHz VR = 20 V* Maximum Total Capacitance CT (pF) 0.4 1.0 0.375 VR = 50 V f = 1 MHz VR = 0 V Typical Total Inductance LT (nH) 1.0 1.0* 1.0 f = 500 MHz - 3 GHz VR = 20 V*
Lead Code B A A
Configuration Dual Cathode Dual Anode Dual Anode
Application Attenuator Limiter Switch
PIN General Purpose Diodes, Typical Specifications TA = 25C
Part Number HSMP3860 3862 3863 3864 Test Conditions Code Marking Code[1] L0 L2 L3 L4 Lead Code 0 2 3 4 Minimum Breakdown Voltage VBR (V) 50 Typical Series Resistance RS () 3.0/1.5* Typical Total Capacitance CT (pF) 0.20
Configuration Single Series Common Anode Common Cathode
VR = VBR Measure IR 10 A
IF = 10 mA f = 100 MHz
*IF = 100 mA
VR = 50 V f = 1 MHz
Typical Parameters at TA = 25C
Part Number HSMP380X 381X 382X 383X 388X 389X Test Conditions Series Resistance RS () 55 75 1.5 20 3.8 3.8 IF = 1 mA f = 100 MHz IF = 10 mA* Carrier Lifetime (ns) 1800 1500 70* 500 2500 200* IF = 50 mA IR = 250 mA IF = 10 mA* IR = 6 mA* Reverse Recovery Time Trr (ns) 500 300 7 80 550 - VR = 10 V IF = 20 mA 90% Recovery Total Capacitance CT (pF) 0.32 @ 50 V 0.27 @ 50 V 0.60 @ 20 V 0.20 @ 50 V 0.30 @ 50 V 0.20 @ 5 V
Note: 1. Package marking code is white.
4
Typical Parameters at TA = 25C (unless otherwise noted), Single Diode
0.45
TOTAL CAPACITANCE (pF)
0.35
TOTAL CAPACITANCE (pF)
10000
0.40 0.35 1 MHz 0.30 0.25 0.20 frequency>100 MHz 0.15 0 2 4 6 8 10 12 14 16 18 20 30 MHz
HSMP-381x, /HSMP-4810
RESISTANCE (OHMS)
0.30 1 MHz 0.25 100 MHz 0.20 1 GHz
1000
HSMP-383x, -386x
100
10
1
HSMP-382x, -4820
0.15
0
2
4
6
8
10 12 14 16 18 20
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
0.1 0.01 0.1 1 10 100 IF - FORWARD BIAS CURRENT (mA)
Figure 1. RF Capacitance vs. Reverse Bias, HSMP-3810 Series.
Figure 2. RF Capacitance vs. Reverse Bias, HSMP-3830 Series.
Figure 3. Resistance at 25C vs. Forward Bias Current.
3000 1000
RF RESISTANCE (OHMS)
10000 TA = +85C TA = +25C TA = -55C TA = +85C TA = +25C TA = -55C
1.4 1.2
CAPACITANCE (pF)
RF RESISTANCE (OHMS)
1000
1 0.8 0.6 0.4 0.2
HSMP-382X
100
100
10
10
HSMP-3880 HSMP-3800 HSMP-381X
HSMP-3830 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 100 IF - FORWARD BIAS CURRENT (mA) 0 0 10 20
HSMP-3890 30 40 50
IF - FORWARD BIAS CURRENT (mA)
VR - REVERSE VOLTAGE (V)
Figure 4. RF Resistance vs. Forward Bias Current for HSMP-3800.
Figure 5. RF Resistance vs. Forward Bias Current for HSMP-3810/ HSMP-4810.
Figure 6. Capacitance vs. Reverse Voltage.
INPUT INTERCEPT POINT (dBm)
INPUT INTERCEPT POINT (dBm)
Diode Mounted as a 110 Series Attenuator in a 50 Ohm Microstrip 100 and Tested at 123 MHz 90 80 70 60 50 40 1000 100 10 HSMP-3810 HSMP-3830
Diode Mounted as a Series Attenuator in a 115 50 Ohm Microstrip and Tested at 123 MHz 110 105 HSMP-3880 100 HSMP-3820 95 HSMP-3830 90 HSMP-3890 85 1 10 30
Trr - REVERSE RECOVERY TIME (ns)
120
120
100 HSMP-382X VR = 2V VR = 5V 10 VR = 10V
HSMP-3830
1 10
20 FORWARD CURRENT (mA)
30
DIODE RF RESISTANCE (OHMS)
IF - FORWARD BIAS CURRENT (mA)
Figure 7. 2nd Harmonic Input Intercept Point vs. Diode RF Resistance for Attenuator Diodes.
Figure 8. 2nd Harmonic Input Intercept Point vs. Forward Bias Current for Switch Diodes.
Figure 9. Reverse Recovery Time vs. Forward Current for Various Reverse Voltages. HSMP-3820 Series.
5
Typical Parameters (continued)
REVERSE RECOVERY TIME (nS)
HSMP-3830
VR = 5V VR = 10V
TRR - REVERSE RECOVERY TIME (nS)
Trr - REVERSE RECOVERY TIME (nS)
1000
VR = 5V 100 VR = 10V VR = 20V
1000 900 800 700 600 500 400 300 200
200
160 VR = -2V 120
80
VR = 20V
VR = -5V VR = -10V 15 20 25 30
40 0 10
10 10
20 FORWARD CURRENT (mA)
30
100 10
15
20
25
30
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
Figure 10. Reverse Recovery Time vs. Forward Current for Various Reverse Voltage. HSMP-3830 Series.
100
IF - FORWARD CURRENT (mA)
Figure 11. Typical Reverse Recovery Time vs. Reverse Voltage. HSMP-3880 Series.
100
IF - FORWARD CURRENT (mA)
Figure 12. Typical Reverse Recovery Time vs. Reverse Voltage. HSMP-3890 Series.
100
IF - FORWARD CURRENT (mA)
HSMP-3800 10
HSMP-3810 HSMP-4810 10
HSMP-382X HSMP-482X 10
1
1
1
0.1 125C 0.01 0 0.2 0.4 25C -50C 0.6 0.8 1.0 1.2
0.1 125C 25C -50C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2
0.1 125C 25C -50C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2
VF - FORWARD VOLTAGE (mA)
VF - FORWARD VOLTAGE (mA)
VF - FORWARD VOLTAGE (mA)
Figure 13. Forward Current vs. Forward Voltage. HSMP-3800 Series.
Figure 14. Forward Current vs. Forward Voltage. HSMP-3810 and HSMP-4810 Series.
Figure 15. Forward Current vs. Forward Voltage. HSMP-3820 and HSMP-4820 Series.
100
IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA)
100
IF - FORWARD CURRENT (mA)
100
HSMP-3830 10
10
10
1
1
1
0.1 125C 25C -50C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 VF - FORWARD VOLTAGE (mA)
0.1 125C 0.01 0 0.2 0.4 25C -55C 0.6 0.8 1.0 1.2
0.1 125C 25C 0 0.2 0.4 0.6 -55C 0.8 1.0 1.2
0.01
VF - FORWARD CURRENT (mA)
VF - FORWARD VOLTAGE (mA)
Figure 16. Forward Current vs. Forward Voltage. HSMP-3830 Series.
Figure 17. Forward Current vs. Forward Voltage. HSMP-3880 Series.
Figure 18. Forward Current vs. Forward Voltage. HSMP-3890 and HSMP-4890 Series.
6
Typical Parameters (continued)
1000 100 0.5
TA = +125C TA = +25C TA = -50C
IF - FORWARD CURRENT (mA)
CT - CAPACITANCE (pF)
RESISTANCE (OHMS)
TA = +85C TA = +25C TA = -55C
0.4
10
100
0.3
1
0.2
10
0.1
0.1
1 0.01
0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 BIAS CURRENT (mA) VF - FORWARD VOLTAGE (V)
0 0 5 10 15 20 VR - REVERSE VOLTAGE (V)
Figure 19. Typical RF Resistance vs. Forward Bias Current for HSMP-3860.
Figure 20. Forward Current vs. Forward Voltage for HSMP-3860.
Figure 21. Typical Capacitance vs. Reverse Bias for HSMP-3860.
Equivalent Circuit Model
HSMS-3860
Cp 0.08 pF
Lp
Rs
Rj
2.0 nH
1.5 Cj
RT = 1.5 + R j 0.12 pF* CT = CP + Cj * Measured at -20 V 12 R j = 0.9 I I = Forward Bias Current in mA
7
Typical Applications for Multiple Diode Products
RF COMMON
RF COMMON
RF 1 RF 1 RF 2
RF 2
BIAS 1
BIAS 2
BIAS
BIAS
Figure 22. Simple SPDT Switch, Using Only Positive Current.
Figure 23. High Isolation SPDT Switch, Dual Bias.
RF COMMON BIAS
RF COMMON
RF 1
RF 2 RF 1 BIAS RF 2
Figure 24. Switch Using Both Positive and Negative Bias Current.
Figure 25. Very High Isolation SPDT Switch, Dual Bias.
8
Typical Applications for Multiple Diode Products (continued)
VARIABLE BIAS
INPUT
RF IN/OUT
FIXED BIAS VOLTAGE
Figure 26. Four Diode Attenuator.
BIAS
Figure 27. High Isolation SPST Switch (Repeat Cells as Required).
Figure 28. Power Limiter Using HSMP-3822 Diode Pair.
9
Typical Applications for HSMP-48XX Low Inductance Series
3
0.5nH
0.3 pF*
3
3
0.5 nH 1 HSMP-4810 2 1 2
0.5 nH
HSMP-4820 & HSMP-4890
1 2 *0.8pF TYPICAL FOR HSMP-3820
Figure 29. Internal Connections.
Figure 30. Equivalent Circuit.
0.25 nH
0.3 pF*
0.5 nH
*0.8 pF TYPICAL FOR HSMP-3820
Figure 31. Circuit Layout.
Figure 32. Equivalent Circuit.
Microstrip Series Connection for HSMP-48XX Series
In order to take full advantage of the low inductance of the HSMP-48XX series when using them in series application, both lead 1 and lead 2 should be connected together, as shown above.
10
1.5 nH
1.5 nH
50 OHM MICROSTRIP LINES 0.3 pF*
0.3 nH
0.3 nH PAD CONNECTED TO GROUND BY TWO VIA HOLES
*0.8 pF TYPICAL FOR HSMP-4820
Figure 33. Circuit Layout.
Figure 34. Equivalent Circuit.
Microstrip Shunt Connections for HSMP-48XX Series
In the diagram above, the center conductor of the microstrip line is interrupted and leads 1 and 2 of the
HSMP-38XX series diode are placed across the resulting gap. This forces the 0.5 nH lead inductance of leads 1 and 2 to appear as part of a low pass filter, reducing the shunt parasitic inductance and
increasing the maximum available attenuation. The 0.3 nH of shunt inductance external to the diode is created by the via holes, and is a good estimate for 0.032" thick material.
Co-Planar Waveguide Groundplane Center Conductor Groundplane 0.75 nH 0.3 pF*
*0.8 pF TYPICAL FOR HSMP-4820
Figure 35. Circuit Layout.
Figure 36. Equivalent Circuit.
Co-Planar Waveguide Shunt Connection for HSMP-48XX Series
Co-Planar waveguide, with ground on the top side of the printed circuit board, is shown
in the diagram above. Since it eliminates the need for via holes to ground, it offers lower shunt parasitic inductance and higher maximum attenuation when compared to a microstrip circuit.
11
Package Dimensions
Outline 23 (SOT-23)
1.02 (0.040) 0.89 (0.035)
PC Board Footprints
SOT-23
0.54 (0.021) 0.37 (0.015) 3
DATE CODE (X)
PACKAGE MARKING CODE (XX)
0.037 0.95
XXX 2 1.40 (0.055) 1.20 (0.047) 2.65 (0.104) 2.10 (0.083)
0.037 0.95
1 0.50 (0.024) 0.45 (0.018)
2.04 (0.080) 1.78 (0.070) TOP VIEW 0.152 (0.006) 0.066 (0.003) 1.02 (0.041) 0.85 (0.033)
0.079 2.0
3.06 (0.120) 2.80 (0.110)
0.035 0.9 0.031 0.8
DIMENSIONS IN inches mm
0.10 (0.004) 0.013 (0.0005) SIDE VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.69 (0.027) 0.45 (0.018) END VIEW
Outline 143 (SOT-143)
0.92 (0.036) 0.78 (0.031) DATE CODE (X) E PACKAGE MARKING CODE (XX) C 1.40 (0.055) 1.20 (0.047) E 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) 3.06 (0.120) 2.80 (0.110) 1.04 (0.041) 0.85 (0.033) 0.10 (0.004) 0.013 (0.0005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.69 (0.027) 0.45 (0.018) 2.65 (0.104) 2.10 (0.083)
SOT-143
0.112 2.85 0.079 2 0.033 0.85 0.075 1.9 0.041 1.05 0.108 2.75
XXX
B
0.54 (0.021) 0.37 (0.015)
0.071 1.8
0.15 (0.006) 0.09 (0.003)
0.033 0.85 0.047 1.2 0.031 0.033 0.8 0.85
inches mm
DIMENSIONS IN
Package Characteristics
Lead Material ...................................................................................... Alloy 42 Lead Finish ............................................................................ Tin-Lead 85-15% Maximum Soldering Temperature .............................. 260C for 5 seconds Minimum Lead Strength .......................................................... 2 pounds pull Typical Package Inductance .................................................................. 2 nH Typical Package Capacitance .............................. 0.08 pF (opposite leads)
Profile Option Descriptions
-BLK = Bulk -TR1 = 3K pc. Tape and Reel, Device Orientation; See Figures 37 and 38 -TR2 = 10K pc. Tape and Reel, Device Orientation; See Figures 37 and 38 Tape and Reeling conforms to Electronic Industries RS-481, "Taping of Surface Mounted Components for Automated Placement."
Ordering Information
Specify part number followed by option under. For example: H SMP - 38XX - XXX Bulk or Tape and Reel Option Part Number Surface Mount PIN Diode Hewlett-Packard
REEL
CARRIER TAPE USER FEED DIRECTION COVER TAPE
TOP VIEW 4 mm
END VIEW
8 mm
www.hp.com/go/rf For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: 1-800-235-0312 or 408-654-8675 Far East/Australasia: Call your local HP sales office. Japan: (81 3) 3335-8152
8 mm
Figure 37. Options -TR1, -TR2 for SOT-23 Packages.
TOP VIEW 4 mm END VIEW
Europe: Call your local HP sales office. Data subject to change. Copyright (c) 1999 Hewlett-Packard Co.
Figure 38. Options -TR1, -TR2 for SOT-143 Packages.
Obsoletes 5968-3435E 5968-5439E (6/99)


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